30 Nov 2017

Gate drivers deliver up to 5 A, reducing complexity and cost

Power Integrations, a specialist in IGBT and MOSFET driver technology for medium- and high-voltage inverter applications, has introduced the newest member of its SCALE-iDriver IC family, SID1102K, a single-channel, isolated, IGBT and MOSFET gate driver in a wide-body eSOP package.

Featuring a peak drive current of up to 5 A, the new part is able to drive 300 A switches without boosters; external boosters can be used to cost-effectively scale gate current up to 60 A peak. This device provides N-channel drive for both the low and high side booster MOSFET switches which reduces system cost, minimizes switching losses and increases power capability.

Reinforced galvanic isolation is provided by Power Integrations’ innovative, solid insulator FluxLink technology which eliminates the need for optocouplers, improving reliability and ruggedness. SCALE-iDriver technology simplifies design and manufacturing by reducing BOM count; complete drivers can be built using a SID1102K IC and just eight external components. Devices deliver system-level protection features including under-voltage lock-out, rail-to-rail stabilized output voltage - from a single supply rail, high common-mode transient immunity and 9.4 mm creepage and clearance.

Comments Michael Hornkamp, senior director of marketing for gate-driver products at Power Integrations: “The new SID1102K gate-driver IC reduces time-to-market for designers by providing an easy-to-implement, scalable solution which includes critical safety and protection features in a single, compact, robust package.”

Key applications include UPS, standard AC drives and VFDs, photovoltaic/ solar systems, commercial air conditioners, DC chargers and welding equipment.

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The electronics industry has a major role to play in helping to save energy, by enabling better equipment and new ways of working and living that that are more efficient and environmentally friendly. Maintaining the pace of technological progress is key, but improvements become both smaller and harder to achieve as each technology matures. We can see this trend in the development of power semiconductors, as device designers seek more complex and expensive ways to reduce switching energy and RDS(ON) against silicon’s natural limitations.









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