28 Jun 2018

Converter series launched for fast-switching GaN drivers

RECOM designed the isolated 1W DC/DC converter series RP-xx06S, now available from Rutronik, to power the latest GaN (Gallium Nitride) drivers. The converters meet the demanding requirements of GaN drivers with a 5200VDC isolation and a low isolation capacitance of less than 10pF.

GaN-FETs are increasingly being used as next-generation, high-power devices for power electronics systems. They are characterised by superior performance, lower losses and higher switching speeds. To be able to use these advantages, suitable converters are necessary. GaN drivers require power supplies with an insulation barrier that can cope with the high switching voltages, high operating temperatures and fast slew rates. 

The RP-xx06S series from RECOM comes with a pot-core that physically separates the input and output windings providing up to 6.4kV/DC isolation. This way, the isolation barrier stands up to even the harshest operating conditions. Thus, they are well suited for GaN devices in higher frequency telecom and aerospace applications.

The converters have an output voltage of +6V which efficiently switches GaN HEMTs (High Electron Mobility Transistors) without causing a gate dielectric breakdown.

Despite the high isolation grade, they fit into an industry standard SIP7 case, thus saving valuable space on the circuit board. The converters are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH. Furthermore, the RP-xx06s series is safety certified to the latest UL/IEC60950 standard.

The converters are available from stock with input voltages of 5V, 12V, 15V or 24V at Rutronik24.com and RECOM offers a three-year warranty for the RP-xx06-series.

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GaN’s Ground-Floor Opportunity Rudy Ramos | Mouser Electronics
GaN’s Ground-Floor Opportunity
The electronics industry has a major role to play in helping to save energy, by enabling better equipment and new ways of working and living that that are more efficient and environmentally friendly. Maintaining the pace of technological progress is key, but improvements become both smaller and harder to achieve as each technology matures. We can see this trend in the development of power semiconductors, as device designers seek more complex and expensive ways to reduce switching energy and RDS(ON) against silicon’s natural limitations.

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