15 Jan 2018
Ultra-high power density LDMOS for avionics unveiled
Richardson RFPD has announced the availability and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors.
The AFV10700H / AFV10700HS, available in bolt-down and solder-down styles, is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. It outputs 700 W P1dB at 1090 MHz, with 50 V and 56 percent efficiency. If operated at 52 V, it can achieve 850 W P1dB at 1030 MHz, with 52 percent efficiency. The new device features highly-integrated on-chip pre-matching and outstanding thermal resistance.
The new LDMOS transistor is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as friend or foe (IFF), secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains. It is the latest addition to NXP’s leading portfolio of L-band devices for aerospace and defense applications.
The AFV10700H/HS is based on NXP’s Airfast technology and is contained in a small NI-780 air cavity package, which occupies 40 percent less space than the standard NI-1230 package used by other LDMOS solutions with a similar power level.
According to NXP, key features of the AFV10700H / AFV10700HS include:
700 W Peak, 50 V
High power density at PA-level: 700 W in 1.3" x 2.6" 50-ohm matching area
Qualified to operate at 52 V, and over frequencies over 960-1215 MHz
Supports long pulses such as ELM and Link 16
Internally input- and output-matched for broadband operation and ease-of-use
Device can be used in a single-ended, push-pull or quadrature configuration
Qualified up to a maximum of 55 VDD operation
High ruggedness, handles > 20:1 VSWR
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