28 Nov 2012

TriQuint claims record GaN reliability

TriQuint Semiconductor claims to have smashed records with its gallium nitride (GaN) circuit reliability exceeding previous industry standards.

TriQuint’s TQGaN25 process, qualified to operate up to 40 Volts, has achieved a mean time to failure (MTTF) of greater than 107 (10 million) hours at 200 degrees (C) and greater than 106 (1 million) hours at 225 degrees (C).

According to the company, this reliability milestone was achieved with TriQuint’s newly-released Generation II 0.25-micron GaN on SiC (silicon carbide) process for GaN product solutions and Foundry Services.

“We’re pleased to announce this new GaN reliability milestone,” said James L. Klein, Vice President and GM for Infrastructure and Defense Products. “The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before.”

The company says it achieved its new GaN performance through in-house development programs, supporting objectives of TriQuint’s Defense Production Act (DPA) Title III contract as funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy.

TriQuint is also reducing manufacturing cycle times and increasing yields while making other GaN enhancements that work hand-in-hand with DPA Title III goals.

All manufacturing enhancements are designed to support greater affordability of next-generation AESA (active electronically scanned array) radars, new EW systems and commercial applications. Defense systems currently in technology development phases have production planned for 2016-2020.

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