25 Aug 2017

Wolfspeed powers up its 50V GaN HEMT family

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated GaN device available, enabling RF design engineers to use fewer components to design smaller and lighter linear amplifier circuits for commercial and military wireless communications and S-band radar applications.

The new 50V GaN HEMT devices provide a combination of high power and high gain with high efficiency operation, making it possible for RF design engineers to replace several lower-power GaN HEMTs or multiple silicon LDMOS devices with a single device in their power amplifier designs. Packaged in a four-leaded metal-flanged ceramic “Gemini” package, the new 250W GaN HEMTs operate efficiently at full rated power, reducing the need for complex thermal management systems.

Their higher power and efficiency rating, combined with a frequency range up to 3.0GHz, makes these devices ideal for a wide range of RF linear and compressed amplifier circuits, including those for military communications systems, radar equipment (UHF, L-, S-band), electronic warfare (EW) systems, as well as RF applications in the industrial, medical, and scientific (ISM) band.

“The addition of these new 250W GaN HEMT devices to our 50V product line enables Wolfspeed to deliver new levels of power and efficiency to our RF customers,” said Jim Milligan, RF and microwave director, Wolfspeed. “Now, RF engineers can simplify their power amplifier designs by replacing multiple power devices with a single part, reducing their component count and making their amplifiers smaller and lighter.”

The CGHV40200PP is a 50V unmatched GaN HEMT device rated for 250W, 3.0GHz operation with 67% efficiency (at PSAT) and 21dB small signal gain at 1.8GHz.

Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. Wolfspeed GaN-on-SiC RF devices enable next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; test instrumentation; and two-way private radios.

The CGHV40200PP GaN HEMTs are now in volume production and are available immediately from Wolfspeed distributors Digi-Key and Mouser.

Most popular news in RF topics

Compact RF PA transistor delivers 600 Watts for RF energy applications
RF modules speed time to market for implantable medical devices
High linearity I/Q demodulator supports 1GHz bandwidth
Movandi works with Keysight to advance millimeter wave technology
Wolfspeed extends GaN HEMT family for UHF radar market

All news in this channel | All news

Share this page

Want more like this? Register for our newsletter

Securing wireless data transport Bernd Hantsche | Rutronik
Securing wireless data transport
Wireless communication is part of the critical infrastructure of our lives, enabling services as diverse as TV and radio, smartphones, remote monitoring, garage-door openers and a rapidly expanding family of Internet of Things devices.
Online - Effective Vector Network Analyzer Measurements
How to make effective VNA measurements at RF and microwave frequencies

More training courses

Forthcoming Events

    . . . . More Events

Radio-Electronics.com is operated and owned by Adrio Communications Ltd and edited by Ian Poole. All information is © Adrio Communications Ltd and may not be copied except for individual personal use. This includes copying material in whatever form into website pages. While every effort is made to ensure the accuracy of the information on Radio-Electronics.com, no liability is accepted for any consequences of using it. This site uses cookies. By using this site, these terms including the use of cookies are accepted. More explanation can be found in our Privacy Policy