19 Oct 2017

ST-MRAM advancement - partnership announcement

Allied Minds subsidiary Spin Transfer Technologies (STT) and Tokyo Electron (TEL) are pleased to announce that they have signed an agreement for a collaborative engineering program for next-generation SRAM and DRAM-class ST-MRAM devices.

The agreement will further the advance of ST-MRAM, a new class of high-performance, persistent memory devices, to provide previously unachievable levels of speed, density, and endurance. The combination of STT’s ST-MRAM technology and TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.

Both companies are allocating resources to this project, with STT contributing its high-speed, high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL utilizing its ST-MRAM deposition tool and knowledge of unique formation capabilities of magnetic films. This agreement aligns with each company’s goal of offering compelling solutions for the embedded SRAM, and eventually stand-alone DRAM, markets.

SRAM is pervasive in nearly all mobile, computing and industrial applications. SRAM is a fast and high-endurance memory, but it is costly, drains much power and is volatile. ST-MRAM, being more compact, is less costly, requires little power when storing data and is nonvolatile, retaining data for long periods without power. Further improvements especially in terms of fast switching and endurance are needed, however, to fully match or exceed SRAM performance.

STT and TEL will demonstrate solutions that are far denser than other ST-MRAM solutions while eliminating barriers to replacing SRAM. These sub-30nm pMTJ’s, 40 to 50 percent smaller than other commercial solutions, should be attractive to advanced logic–ICs and a significant step toward making DRAM-class ST-MRAM devices.

“Industries have outgrown the capabilities of SRAM and DRAM leaving the market open for the next generation of technology,” said Tom Sparkman, CEO of STT. “Having TEL, the world’s leading ST-MRAM deposition equipment supplier, as a partner speeds up the development of STT’s technology for replacing SRAM and DRAM. We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs.”

“Together with STT’s team of experts, device fabrication know-how and its on-site development fab, we expect to accelerate the development of high-performance, high-density MRAM devices for the SRAM market and ultimately the DRAM replacement market.” said Yoichi Ishikawa, vice president, PVD Dept. of TEL’s Thin Film Formation Business Unit. “We thank STT for recognizing the performance of and for choosing our advanced MRAM deposition system for this purpose.”

Most popular news in Processing & embedded

Hyperstone U8 inside TERZ KALIBER-XS USB flash drives.
Softil extends functionality of portfolio of developer tools
Next-generation augmented reality head-up displays
PIC18 MCUs make CAN-based designs simpler
INTEGRITY solutions for the Xilinx Zynq UltraScale+ MPSoC

All news in this channel | All news


Share this page


Want more like this? Register for our newsletter






What makes e-paper the best display technology for Makers? Scott Soong | Pervasive Displays
What makes e-paper the best display technology for Makers?
Scott Soong of Pervasive Displays discusses how e-paper technology is contributing to the world of makers rather than just major companies enabling makers to utilise its advantages in projects based around Raspberry Pi and other single board computers.
Training
Online - Fundamentals of Modern RF and Wireless Communications Engineering
This on-line course enables you to quickly get up-to-speed & understand key concepts of modern radio frequency, RF & wireless communications systems

More training courses










Radio-Electronics.com is operated and owned by Adrio Communications Ltd and edited by Ian Poole. All information is © Adrio Communications Ltd and may not be copied except for individual personal use. This includes copying material in whatever form into website pages. While every effort is made to ensure the accuracy of the information on Radio-Electronics.com, no liability is accepted for any consequences of using it. This site uses cookies. By using this site, these terms including the use of cookies are accepted. More explanation can be found in our Privacy Policy