15 Jan 2013

Vishay MOSFETs promise lowest on-resistance

The latest 8V and 20V n-channel and p-channel TrenchFET power MOSFETs from Vishay Intertechnology are claimed to have the industry's lowest on-resistance.

The MOSFETs come in 1mm by 1mm by 0.55mm and 1.6mm by 1.6mm by 0.6mm CSP MICRO FOOT packages, and target battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices.

The devices' low on-resistance means a lower voltage drop across the load switch can prevent unwanted under-voltage lockout.

For applications where low on-resistance is more critical than space, the 8 V n-channel Si8424CDB and - 20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at a 4.5 V gate drive.

The devices are offered in the 1.6mm by 1.6mm by 0.6mm CSP package. With 43mΩ maximum on-resistance at 4.5V, the smaller 1mm by 1mm by 0.55mm Si8466EDB 8 V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3000V typical ESD protection.

The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2 V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.

The devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.

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