20 Jun 2012
TriQuint GaAs amplifiers promise lowest noise figure
TriQuint Semiconductor is sampling two packaged, surface-mount low-noise amplifiers (LNAs) that are said to deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications.
The new devices are based on the company’s GaAs E-pHEMT process and include the TQP3M9036 that operates from 400 to 1500MHz with a noise figure of 0.45dB and the TQP3M9037 that operates from 1500 to 2700MHz with a noise figure of 0.40dB.
Both are suitable for infrastructure applications such as cellular base stations, tower-mounted amplifiers (TMAs), small cell wireless networks, repeaters, 700-MHz LTE networks, and emerging wireless systems using “white spaces” in the UHF spectrum.
The amplifiers are said to simplify RF design by integrating key functions on-chip and within the package that are typically performed by external components.
They also address the growing TDD-LTE market with integrated digital shut-down biasing capability and can deliver high performance from bias voltages of +3V to +5V without a negative supply voltage.
The biasing network maintains stability over temperature through a current mirror and resistive feedback; it also provides the switching circuit for the digital power-down function.
The LNAs have been configured on-chip to provide the best combination noise figure, linearity and reliability. Each is pin-compatible with similar products in the TriQuint portfolio and are housed in industry-standard, RoHS-compliant 2x2mm, 8-lead DFN packages.
They are said to be extremely rugged and can block high-power interfering input signals or transmit power leakages greater than +22dBm.
The devices are also unconditionally stable to eliminate potential oscillations. The TQP3M9036 and TQP3M9037 are internally matched to 50 ohms and do not require any external matching circuitry for operation.
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