07 Dec 2017
GaN 5.5 W X-band medium power amplifier offers 36% PAE
Richardson RFPD has announced the availability and full design support capabilities for a new two-stage medium power amplifier from United Monolithic Semiconductors S.A.S. (UMS).
The CHA6710-99F is a GaN-based 5.5 W, X-band medium power amplifier. It exhibits 36% of power added efficiency and 23.5 dB linear gain. It is manufactured using UMS’ proprietary 0.25 µm gate length GaN HEMT process and is available as a bare die.
The new PA is designed for a wide range of applications, including defense and commercial communication systems.
Additional key features of the CHA6710-99F include:
Frequency range: 8–12.75 GHz
Psat: 5.5 W
DC bias: Vd=25 V @ Idq=0.2 A
Chip size: 2.70 mm x 2.15 mm x 0.10 mm
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