Gunn Diode Operation

- explanation of how a Gunn diode or transferred electron device works, its operation as a microwave device.

The Gunn diode is not like a typical PN junction diode. Rather than having both p-type and n-type semiconductor, it only utilises n-type semiconductor where electrons are the majority carriers.

The Gunn diode operation depends upon the very thin active region for its operation, it forms an ideal low power microwave RF oscillator, although it may also be used as an RF amplifier as well.

Gunn diode operation basics

The operation of the Gunn diode can be explained in basic terms. When a voltage is placed across the device, most of the voltage appears across the inner active region. As this is particularly thin this means that the voltage gradient that exists in this region is exceedingly high.

The device exhibits a negative resistance region on its V/I curve as seen below. This negative resistance area enables the Gunn diode to amplify signals. This can be used both in amplifiers and oscillators. However Gunn diode oscillators are the most commonly found.

The characteristic of a Gunn diode showing the positive and the negative resistance regions
Gunn diode characteristic

This negative resistance region means that the current flow in diode increases in the negative resistance region when the voltage falls - the inverse of the normal effect in any other positive resistance element. This phase reversal enables the Gunn diode to act as an amplifier and oscillator.

Gunn diode operation at microwave frequencies

At microwave frequencies, it is found that the dynamic action of the diode incorporates elements resulting from the thickness of the active region. When the voltage across the active region reaches a certain point a current is initiated and travels across the active region. During the time when the current pulse is moving across the active region the potential gradient falls preventing any further pulses from forming. Only when the pulse has reached the far side of the active region will the potential gradient rise, allowing the next pulse to be created.

It can be seen that the time taken for the current pulse to traverse the active region largely determines the rate at which current pulses are generated, and hence it determines the frequency of operation.

To see how this occurs, it is necessary to look at the electron concentration across the active region. Under normal conditions the concentration of free electrons would be the same regardless of the distance across the active diode region. However a small perturbation may occur resulting from noise from the current flow, or even external noise - this form of noise will always be present and acts as the seed for the oscillation. This grows as it passes across the active region of the Gunn diode.

Operation of a Gunn diode showing how the current pulses migrate across the diode
Gunn diode operation

The increase in free electrons in one area cause the free electrons in another area to decrease forming a form of wave. It also results in a higher field for the electrons in this region. This higher field slows down these electrons relative to the remainder. As a result the region of excess electrons will grow because the electrons in the trailing path arrive with a higher velocity. Similarly the area depleted of electrons will also grow because the electrons slightly ahead of the area with excess electrons can move faster. In this way, more electrons enter the region of excess making it larger, and more electrons leave the depleted region because they too can move faster. In this way the perturbation increases.

Diagram showing the operation of a Gunn diode and how electrons in the curent peak transfer across the diode
Gunn diode operation - electrons in the peak move more slowly

The peak will traverse across the diode under the action of the potential across the diode, and growing as it traverses the diode as a result of the negative resistance.

A clue to the reason for this unusual action can be seen if the voltage and current curves are plotted for a normal diode and a Gunn diode. For a normal diode the current increases with voltage, although the relationship is not linear. On the other hand the current for a Gunn diode starts to increase, and once a certain voltage has been reached, it starts to fall before rising again. The region where it falls is known as a negative resistance region, and this is the reason why it oscillates.

By Ian Poole


<< Previous   |   Next >>


Share this page


Want more like this? Register for our newsletter








Goodlight G5 LED Batten installed into a classroom Saima Shafi | LED Eco Lights
SMART lighting takes LED lighting to a new level
Smart technology can be integrated into LED lamps to improve their efficiency by enabling them to increase their light levels only the it is needed . . find out more.
Training
Online - Fundamentals of Modern RF and Wireless Communications Engineering
This on-line course enables you to quickly get up-to-speed & understand key concepts of modern radio frequency, RF & wireless communications systems

More training courses

Whitepapers
Bringing the Internet of Things to Life
Silicon Labs looks at the fact that industry experts predict that the number of connected devices for the Internet of Things (IoT) will surpass 15 billion nodes by 2015 and reach over 50 billion by 2020. Learn how to overcome the challenges of connecting intelligent nodes to the Internet of Things.

More whitepapers










Radio-Electronics.com is operated and owned by Adrio Communications Ltd and edited by Ian Poole. All information is © Adrio Communications Ltd and may not be copied except for individual personal use. This includes copying material in whatever form into website pages. While every effort is made to ensure the accuracy of the information on Radio-Electronics.com, no liability is accepted for any consequences of using it. This site uses cookies. By using this site, these terms including the use of cookies are accepted. More explanation can be found in our Privacy Policy