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Fundamentals of Ultra-Thin- Body MOSFETs and FinFETs
Jerry G. Fossum and Vishal P. Trivedi
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Electronics technology is developing at a tremendous rate driven largely by the increased requirements for computing power in everything from computers themselves to mobile phones and almost any electronics device in the home, office or factory.
This has forces the size of individual features on integrated circuit chips to be reduced. Scaling of devices has enabled a doubling of the density on typical CMOS IC chips almost every two years. This has been achieved mainly by ratioing the dimensions and related parameters of the basic classical transistor structure.
This has led to gate lengths of around 30 to 40 nm and as a result, straightforward scaling is no longer possible mainly because there are fundamental limitations in the reliable doping of features this small.
To overcome this, one technique is to create new structures like the ultra-thin-body transistor. One implementation of this was the Intel ‘trigate transistor’ or FinFET that is being used on 22nm CMOS technology and beyond.
This book provides insight into the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors.
The book describes FD/SOI MOSFETs and 3-D FinFETs in detail and covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM.
This volume than continues with providing the design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time. It pProjects potential nanoscale UTB CMOS performances.
The book is aimed at professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration.
|Cover:||Hardcover 250 pages|
|Publisher:||Cambridge University Press|
|Publication:||29 August 2013|
|Book Dimensions:||24.8 x 17.4 x 1.6 cm|